| PART |
Description |
Maker |
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
| 2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| VPH01 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For Extended-Definition TV Projections
|
SANYO[Sanyo Semicon Device]
|
| VPH03 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA1452A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED High Current Switching Applications
|
TOSHIBA
|
| MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
| 2SC2552 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| 2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications
|
TOSHIBA
|
